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Electric-field dependent g-factor anisotropy in Ge-Si core-shell nanowire quantum dots

机译:Ge-si核壳中电场依赖的g因子各向异性   纳米线量子点

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摘要

We present angle-dependent measurements of the effective g-factor g* in aGe-Si core-shell nanowire quantum dot. g* is found to be maximum when themagnetic field is pointing perpendicular to both the nanowire and the electricfield induced by local gates. Alignment of the magnetic field with the electricfield reduces g* significantly. g* is almost completely quenched when themagnetic field is aligned with the nanowire axis. These findings confirm recentcalculations, where the obtained anisotropy is attributed to a Rashba-typespin-orbit interaction induced by heavy-hole light-hole mixing. In principle,this facilitates manipulation of spin-orbit qubits by means of a continuoushigh-frequency electric field.
机译:我们在Ge-Si核-壳纳米线量子点中提出了有效g因子g *的角度依赖性测量。当磁场指向垂直于纳米线和局部栅极感应的电场时,g *最大。磁场与电场的对准显着降低了g *。当磁场与纳米线轴对齐时,g *几乎被完全淬灭。这些发现证实了最近的计算,其中获得的各向异性归因于重孔轻孔混合引起的Rashba型自旋轨道相互作用。原则上,这有利于通过连续的高频电场操纵自旋轨道量子位。

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